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savantic semiconductor product specification silicon npn power transistors 2SD1088 d escription with to-220 package high dc current gain darlington applications for switching igniter applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 300 v v ceo collector-emitter voltage open base 250 v v ebo emitter-base voltage open collector 5 v i c collector current-continuous 6 a i cm collector current-peak 10 a i b base current 1 a p d total power dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD1088 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.5a ;l=40mh 250 v v cesat collector-emitter saturation voltage i c =4a;i b =0.04a 2.0 v v besat base-emitter saturation voltage i c =4a ;i b =0.04a 2.5 v i cbo collector cut-off current v cb =300v; i e =0 0.5 ma i ebo emitter cut-off current v eb =5v; i c =0 0.5 ma h fe-1 dc current gain i c =2a ; v ce =2v 2000 h fe-2 dc current gain i c =4a ; v ce =2v 200 c ob collector output capacitance f=1mhz;v cb =50v 35 pf
savantic semiconductor product specification 3 silicon npn power transistors 2SD1088 package outline fig.2 outline dimensions (unindicated tolerance:0.10 mm)
savantic semiconductor product specification 4 silicon npn power transistors 2SD1088
savantic semiconductor product specification 5 silicon npn power transistors 2SD1088

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